Asymmetric Growth of Bilayer Graphene on Copper Enclosures Using Low-Pressure Chemical Vapor Deposition

In this work, we investigated the growth mechanisms of bilayer graphene on the outside surface of Cu enclosures at low pressures. We observed that the asymmetric growth environment of a Cu enclosure can yield a much higher (up to 100%) bilayer coverage on the outside surface as compared to the bilayer growth on a flat Cu foil, where both sides are exposed to the same growth environment. By simultaneously examining the graphene films grown on both the outside and inside surfaces of the Cu enclosure, we find that carbon can diffuse from the inside surface to the outside via exposed copper regions on the inside surface. The kinetics of this process are examined by coupling the asymmetric growth between the two surfaces through a carbon diffusion model. Finally, using these results, we show that the coverage of bilayer graphene can be tuned simply by changing the thickness of the Cu foil, further confirming our model of carbon delivery through the Cu foil.