Journal
ACS NANO
Volume 8, Issue 12, Pages 12063-12070Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn5058968
Keywords
hexagonal boron nitride; Ir(111); chemical vapor deposition; temperature-programmed growth; X-ray photoelectron diffraction
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Funding
- Italian Ministery for Research (MIUR)
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We investigate the structure of epitaxially grown hexagonal boron nitride (h-BN) on Ir(111) by chemical vapor deposition of borazine. Using photoelectron diffraction spectroscopy, we unambiguously show that a single-domain h-BN monolayer can be synthesized by a cyclic dose of high-purity borazine onto the metal substrate at room temperature followed by annealing at T = 1270 K, this method giving rise to a diffraction pattern with 3-fold symmetry. In contrast, high-temperature borazine deposition (T = 1070 K) results in a h-BN monolayer formed by domains with opposite orientation and characterized by a 6-fold symmetric diffraction pattern. We identify the thermal energy and the binding energy difference between fcc and hcp seeds as key parameters in controlling the alignment of the growing h-BN clusters during the first stage of the growth, and we further propose structural models for the h-BN monolayer on the Ir(111) surface.
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