Journal
ACS NANO
Volume 8, Issue 2, Pages 1485-1490Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn405529r
Keywords
gallium selenide; two-dimensional layered crystals; van der Waals epitaxy; optoelectronics
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Funding
- National Natural Science Foundation of China [21173004, 21222303, 51121091, 51290272, 51222202]
- National Basic Research Program of China [2011CB921904, 2013CB932603, 2014CB932500, 2012CB933404]
- Fundamental Research Funds for the Central Universities [2012QNA4005]
- NCET
- SRF for ROCS, SEM
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We present the controlled synthesis of high-quality two-dimensional (2D) GaSe crystals on flexible transparent mica substrates via a facile van der Waals epitaxy method. Single- and few-layer GaSe nanoplates with the lateral size of up to tens of micrometers were produced. The orientation and nucleation sites of GaSe nanoplates were well-controlled. The 20 GaSe crystal-based photodetectors were demonstrated on both mechanically rigid SiO2/Si and flexible mica substrates. Efficient photoresponse was observed in 2D GaSe crystal devices on transparent flexible mica substrates, regardless of repeated bending with different radii. The controlled growth of 20 GaSe crystals with efficient photoresponsivity opens up opportunities for both fundamental aspects and new applications in photodetectors.
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