4.8 Article

Wafer Scale Formation of Monocrystalline Silicon-Based Mie Resonators via Silicon-on-Insulator Dewetting

Journal

ACS NANO
Volume 8, Issue 11, Pages 11181-11190

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nn505632b

Keywords

Mie resonators; thin fim dewetting; all-dielectric nanophotonics; silicon nanoparticles

Funding

  1. A*MIDEX project - Investissements d'Avenir French Government program [ANR-11-IDEX-0001-02]
  2. French Institute Carnot Star
  3. LABEX WIFI (Laboratory of Excellence within the French Program Investments for the Future) [ANR-10-LABX-24, ANR-10-IDEX-0001-02 PSI*]

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Subwavelength-sized dielectric Mie resonators have recently emerged as a promising photonic platform, as they combine the advantages of dielectric microstructures and metallic nanoparticles supporting surface plasmon polaritons. Here, we report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates. Spontaneous dewetting is shown to allow the production of monocrystalline Mie-resonators that feature two resonant modes in the visible spectrum, as observed in confocal scattering spectroscopy. Homogeneous scattering responses and improved spatial ordering of the Si-based resonators are observed when dewetting is assisted by electron beam lithography. Finally, exploiting different thermal agglomeration regimes, we highlight the versatility of this technique, which, when assisted by focused ion beam nanopatterning, produces monocrystalline nanocrystals with ad hoc size, position, and organization in complex multimers.

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