Journal
ACS NANO
Volume 8, Issue 3, Pages 2230-2236Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn405477f
Keywords
graphene; metal-catalyst-free synthesis; plasma-enhanced chemical vapor deposition; light emitting diodes; in situ ohmic contact formation
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Funding
- Priority Research Centers Program through the National Research Foundation of Korea (NRF) [2012-0005859]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) [2012-0007298, 2012-040278]
- Center for Topological Matter in POSTECH through the National Research Foundation of Korea (NRF) [2011-0030786]
- Nanomaterial Technology Development Program through the National Research Foundation of Korea (NRF) [2012M3A7B4049888]
- Ministry of Education, Science and Technology (MEST)
- WCU Hybrid Materials Program through the National Research Foundation of Korea [R31-2008-000-10075-0]
- BK21 Plus Program through the National Research Foundation of Korea
- Ministry of Education, Science and Technology of the Advanced Institutes of Convergence Technology (AICT) [2010-P2-10]
- Technology Innovation Program [10035430]
- Ministry of Knowledge Economy
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The integration of graphene into devices is a challenging task because the preparation of a graphene-based device usually includes graphene growth on a metal surface at elevated temperatures (similar to 1000 degrees C) and a complicated postgrowth transfer process of graphene from the metal catalyst. Here we report a direct integration approach for incorporating polycrystalline graphene into light emitting diodes (LEDs) at low temperature by plasma-assisted metal-catalyst-free synthesis. Thermal degradation of the active layer in LEDs is negligible at our growth temperature, and LEDs could be fabricated without a transfer process. Moreover, in situ ohmic contact formation is observed between DG and p-GaN resulting from carbon diffusion into the p-GaN surface during the growth process. As a result, the contact resistance is reduced and the electrical properties of directly integrated LEDs outperform those of LEDs with transferred graphene electrodes. This relatively simple method of graphene integration will be easily adoptable in the industrialization of graphene-based devices.
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