Journal
ACS NANO
Volume 8, Issue 9, Pages 9492-9502Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn503713f
Keywords
block copolymers; self-assembly; resistive memory; conductive filament
Categories
Funding
- Basic Science Research Program [NRF-2012R1A2A1A03010415, 2007-0056090]
- Global Research Network Program - Korea government (MSIP) through the National Research Foundation of Korea (NRF) [NRF-2011-220-D00063]
- Center for Integrated Smart Sensors - Ministry of Science, ICT & Future Planning as Global Frontier Project [CISS-2012M3A6A6054187, CISS-2011-0031848]
- Research Center Program of IBS (Institute for Basic Science) - Ministry of Education, Science and Technology (MEST) of Korea [CA1301-03]
- National Research Foundation of Korea [2012R1A2A1A03010415, 2012M3A6A6054193, 2011-0031848] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Resistive random access memory (ReRAM) is a promising candidate for future nonvolatile memories. Resistive switching in a metal insulator metal structure is generally assumed to be caused by the formation/rupture of nanoscale conductive filaments (CFs) under an applied electric field. The critical issue of ReRAM for practical memory applications, however, is insufficient repeatability of the operating voltage and resistance ratio. Here, we present an innovative approach to reliably and reproducibly control the CF growth in unipolar NiO resistive memory by exploiting uniform formation of insulating SiOx nanostructures from the self-assembly of a Si-containing block copolymer. In this way, the standard deviation (SD) of set and reset voltages was markedly reduced by 76.9% and 59.4%, respectively. The SD of high resistance state also decreased significantly, from 63 x 10(7) Omega to 5.4 x 104 Omega. Moreover, we report direct observations of localized metallic Ni CF formation and their controllable growth using electron microscopy and discuss electrothermal simulation results based on the finite element method supporting our analysis results.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available