Journal
ACS NANO
Volume 8, Issue 8, Pages 7663-7670Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn5036087
Keywords
graphene; radio frequency transistor; flexible electronics; low noise amplifier; frequency mixer
Categories
Funding
- National Tsing Hua University
- Taiwan Ministry of Science and Technology [MOST 103-2628-M-007-004-MY3, MOST 103-2119-M-007-008-MY3, MOST 102-2633-M-007-002]
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Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.
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