Journal
ACS NANO
Volume 9, Issue 1, Pages 419-426Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn5055909
Keywords
chitosan; natural solid polymers; redox-based memory; solution processes; resistive switching memory
Categories
Funding
- National Research Foundation (NRF) - Korea government (MEST) [2010-0015014]
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry Energy (MOTIE) [10045226]
- Korea Semiconductor Research Consortium (KSRC)
- Brain Korea 21 PLUS project (Center for Creative Industrial Materials)
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A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. The memory device based on chitosan as a natural solid polymer electrolyte can be switched reproducibly between high and low resistance states. In addition, the data retention measurement confirmed the reliability of the chitosan-based nonvolatile memory device. The transparent Ag-embedded chitosan film showed an acceptable and comparable resistive switching behavior on the flexible plastic substrate as well. A cost-effective, environmentally benign memory device using chitosan satisfies the functional requirements of nonvolatile memory operations.
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