Journal
ACS NANO
Volume 8, Issue 2, Pages 1923-1931Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn406505t
Keywords
reduced graphene oxide; chemical doping; tunable memory characteristics; increased work function; flexible floating gate memory
Categories
Funding
- Shenzhen Municipality [JCYJ20120618115445056]
- City University of Hong Kong [7002853]
- Research Grants Council of the Hong Kong Special Administrative Region [T23-713/11]
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Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.
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