Journal
ACS NANO
Volume 8, Issue 5, Pages 4948-4953Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn5009929
Keywords
transition metal dichalcogenides; digital circuits; monolayer semiconductors; complementary logic; CMOS electronics
Categories
Funding
- Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
- ATMI, Inc.
- Applied Materials, Inc. under the iRICE program
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In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form degenerately doped n+ contacts for electron Injection. An ON/OFF current ratio of >10(4) is achieved for both n- and p-FETs with similar ON current densities. A dc voltage gain of >12 is measured for the complementary WSe2 inverter. This work presents an important advance toward realization of complementary logic devices based on layered chalcogenide semiconductors for electronic applications.
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