Journal
ACS NANO
Volume 7, Issue 4, Pages 3246-3252Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn3059136
Keywords
two-dimensional materials; dichalcogenides; MoS2; graphene; nanoelectronics; memory; heterostructures
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Funding
- Swiss National Science Foundation [138237, 135046]
- Swiss Nanoscience Institute (NCCR Nanoscience)
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Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all 20 transistor is further Integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 20 nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration.
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