Journal
ACS NANO
Volume 7, Issue 10, Pages 9205-9212Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn4038145
Keywords
topological insulator; magnetic doping; van Vleck magnetism; electric-field-controlled ferromagnetism
Categories
Funding
- Focus Center Research Program-Center on Functional Engineered Nano Architectonics (FENA)
- Defense Advanced Research Projects Agency (DARPA) [N66001-12-1-4034, N66001-11-1-4105]
- Raytheon endowed chair professorship
- Natural Science Foundation of China [11174244]
- Zhejiang Provincial Natural Science Foundation of China [LR12A04002]
- National Young 1000 Talents Plan
- National Basic Research Program of China (973 Program) [2011CBA00100]
- National Natural Science Foundation of China [10974231, 11174337]
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Breaking the time-reversal-symmetry of topological insulators through magnetic doping has led to exotic physical discoveries. Here, we report the gate-dependent magneto-transport measurements on the Cr-doped (BixSb1-x)(2)Te-3 thin films. With effective top-gate modulations, we demonstrate the presence of both the hole-mediated RKKY coupling and carrier-independent van Vleck magnetism in the magnetic TI systems. Most importantly, by varying the Cr doping concentrations from 2% to 20%, we unveil the interplay between the two magnetic orders and establish the valid approach to either enhance or suppress each individual contribution. The electric-field-controlled ferromagnetisms identified in the Cr-doped TI materials will serve as the fundamental step to further explore the TRS-breaking TI systems, and it applications. may also help to expand the functionality of TI-based device for spintronics
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