Journal
ACS NANO
Volume 7, Issue 8, Pages 7021-7027Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn402919d
Keywords
quantum tunneling; graphene; MoS2; vertical heterostructure; field-effect transistor; spin filter
Categories
Funding
- NRF
- Ministry of Education, Science, and Technology [2012R1A1A4A01008299, NO2012R1A1A2005772]
- National Research Foundation of Korea [2012R1A1A4A01008299, 2012R1A1A2005772] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced, by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.
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