Journal
ACS NANO
Volume 7, Issue 6, Pages 5360-5366Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn401212p
Keywords
carbon nanotubes; resistive memory; RRAM scaling; crossbar; atomic layer deposition (ALD); aluminum oxide
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Funding
- MSD Focus Center under the Focus Center Research Program (FCRP), a Semiconductor Research Corporation entity
- NSF [09-05175, 10-02026]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0905175] Funding Source: National Science Foundation
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We use single-walled carbon nanotube (CNT) crossbar electrodes to probe sub-5 nm memory domains of thin AlOx films. Both metallic and semiconducting CNTs effectively switch AlOx bits between memory states with high and low resistance. The low-resistance state scales linearly with CNT series resistance down to similar to 10 M Omega, at which point the ON-state resistance of the AlOx filament becomes the limiting factor. Dependence of switching behavior on the number of cross-points suggests a single channel to dominate the overall characteristics in multi-crossbar devices. We demonstrate ON/OFF ratios up to 5 x 10(5) and programming currents of 1 to 100 nA with few-volt set/reset voltages. Remarkably low reset currents enable a switching power of 10-100 nW and estimated switching energy as low as 0.1-10 0 per bit. These results are essential for understanding the ultimate scaling limits of resistive random access memory at single-nanometer bit dimensions.
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