Journal
ACS NANO
Volume 7, Issue 12, Pages 11333-11340Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn405194e
Keywords
WS2; transition-metal dichalcogenides; two-dimensional materials; atomic layer deposition; WS2 nanotube
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Funding
- Converging Research Center Program through the Ministry of Education, Science and Technology [2013K000173]
- Industrial Strategic Technology Development Program [10041926]
- Ministry of Knowledge Economy (MKE, Korea)
- Korea Evaluation Institute of Industrial Technology (KEIT) [10041926] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The synthesis of atomically thin transition-metal disulfides (MS2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS2 nanosheets through the sulfurization of an atomic layer deposition (AID) WO, film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the AID-based WS2 nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS2 measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS2, and the subthreshold swing is comparable to that of an exfoliated MoS2 FET device. Moreover, by utilizing the high conformality of the AID process, we have developed a process for the fabrication of WS2 nanotubes.
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