Journal
ACS NANO
Volume 7, Issue 9, Pages 7751-7758Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn402348r
Keywords
molybdenum disulfide; field effect transistor; electronic transport; gate bias stress
Categories
Funding
- National Creative Research Laboratory Program [2012026372]
- National Core Research Center [R15-2008-006-03002-0]
- National Research Foundation of Korea (NRF) [2012-0000117]
- Korean Ministry of Science, ICT & Future Planning
- Korea Basic Science Institute (KBSI) [T33516]
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We investigated the gate bias stress effects of multilayered MoS2 field effect transistors (FETs) with a back-gated configuration. The electrical stability of the MoS2 FETs can be significantly influenced by the electrical stress type, relative sweep rate, and stress time in an ambient environment. Specifically, when a positive gate bias stress was applied to the MoS2 FET, the current of the device decreased and its threshold shifted in the positive gate bias direction. In contrast, with a negative gate bias stress, the current of the device increased and the threshold shifted in the negative gate bias direction. The gate bias stress effects were enhanced when a gate bias was applied for a longer time or when a slower sweep rate was used. These phenomena can be explained by the charge trapping due to the adsorption or desorption of oxygen and/or water on the MoS2 surface with a positive or negative gate bias, respectively, under an ambient environment. This study will be helpful in understanding the electrical-stress-induced instability of the MoS2-based electronic devices and will also give insight into the design of desirable devices for electronics applications.
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