Journal
ACS NANO
Volume 7, Issue 6, Pages 5522-5529Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn4017422
Keywords
four-states memory; multiferroic memory; polarization-magnetization cross-coupling; Mn-doped BaTiO3 nanorods; piezoelectric force microscopy; magnetic force microscopy
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Funding
- Brain Korea 21 Project
- Korea Research Foundation Grant [KRF-2008-313-C00309]
- WCU (World Class University) program
- Korea Research Foundation of Korea [R31-2008-000-10059-0]
- KISTI Supercomputing Centre of Korea [KSC-2012-C2-22]
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Multiferroics that show simultaneous ferroic responses have received a great deal of attention by virtue of their potential for enabling new device paradigms. Here, we demonstrate a high-density four-states multiferroic memory using vertically aligned Mn-doped BaTiO3 nanorods prepared by applying the dip-pen nanolithography technique. In the present nanorods array, the polarization (P) switching by an external electric field does not influence the magnetization (M) of the nanorod owing to a negligible degree of the P M cross-coupling. Similarly, the magnetic-field-induced M switching Is unaffected by the ferroelectric polarization. On the basis of these, we are able to implement a four-states nonvolatile multiferroic memory, namely, (+P,+M), (+P,-M),(-P,+M), and (-P,-M) with the reliability in the P and M switching. Thus, the present work makes an important step toward the practical realization of multistate ferrolc memories.
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