Journal
ACS NANO
Volume 7, Issue 6, Pages 5168-5174Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn400899v
Keywords
graphene; p-n diode; vertical Junction; tunneling; asymmetric; rectification; Interlayer
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Funding
- National Research Foundation of Korea (NRF)
- Korean government (Ministry of Education, Science and Technology, MEST) [2011-0017373]
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Formation and characterization of graphene p-n junctions are of particular interest because the p-n junctions are used in a wide variety of electronic/photonic systems as building blocks. Graphene p-n junctions have been previously formed by using several techniques, but most of the studies are based on lateral-type p-n junctions, showing no rectification behaviors. Here, we report a new type of graphene p-n junction. We first fabricate and characterize vertical-type graphene p-n junctions with two terminals. One of the most Important characteristics of the vertical junctions is the asymmetric rectifying behavior showing an on/off ratio of similar to 10(3) under bias voltages below +/- 10 V without gating at higher n doping concentrations, which may be useful for practical device applications. In contrast, at lower n doping concentrations, the p-n junctions are ohmic, consistent with the Klein-tunneling effect. The observed rectification results possibly from the formation of strongly corrugated Insulating or semiconducting interlayers between the metallic p- and n-graphene sheets at higher n doping concentrations, which is actually a structure like a metal Insulator metal or metal semiconductor metal tunneling diode. The properties of the diodes are almost invariant even 6 months after fabrication.
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