Journal
ACS NANO
Volume 7, Issue 11, Pages 10245-10256Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn4045694
Keywords
ambipolar transport; rubrene derivative; CNT; charge injection; Schottky barrier
Categories
Funding
- MRSEC program of the National Science Foundation at University of Minnesota [DMR-0819885]
- University of Minnesota
- NSF through the MRSEC program
- Office of Naval Research MURI Program [N00014-11-1-0690]
- PF Program Advisory Committee [2011G161, 2013G135]
- KAKENHI from Japan Society for the Promotion of Science (JSPS) [23750209]
- G-COE program of Chiba University (Advanced School for Organic Electronics) [G-3]
- Grants-in-Aid for Scientific Research [23750209, 25288114] Funding Source: KAKEN
Ask authors/readers for more resources
We have examined the significant enhancement of ambipolar charge injection and transport properties of bottom-contact single crystal field-effect transistors (SC-FETs) based on a new rubrene derivative, bis(trifluoromethyl)-dimethyl-rubrene (fm-rubrene), by employing carbon nanotube ((NT) electrodes. The fundamental challenge associated with fm-rubrene crystals is their deep-lying HOMO and LUMO energy levels, resulting in inefficient hole injection and suboptimal electron injection from conventional Au electrodes due to large Schottky barriers. Applying thin layers of CNT network at the charge injection interface of fm-rubrene crystals substantially reduces the contact resistance for both holes and electrons; consequently, benchmark ambipolar mobilities have been achieved, reaching 4.8 cm(2) V-1 s(-1) for hole transport and 4.2 cm(2) V-1 s(-1) for electron transport. We find that such improved injection efficiency in fm-rubrene is beneficial for ultimately unveiling its intrinsic charge transport properties so as to exceed those of its parent molecule, rubrene, in the current device architecture. Our studies suggest that CNT electrodes may provide a universal approach to ameliorate the charge injection obstacles in organic electronic devices regardless of charge carrier type, likely due to the electric field enhancement along the nanotube located at the crystal/electrode interface.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available