Journal
ACS NANO
Volume 7, Issue 7, Pages 5694-5700Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn401992q
Keywords
graphene; carrier transport; ion irradiation; defect; helium ion microscope; transport gap; strong localization
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Funding
- Japan Society for the Promotion of Science (JSPS)
- Council for Science and Technology Policy (CSTP)
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The conduction properties of graphene were tuned by tailoring the lattice by using an accelerated helium ion beam to embed low-density defects in the lattice. The density of the embedded defects was estimated to be 2-3 orders of magnitude lower than that of carbon atoms, and they functionalized a graphene sheet in a more stable manner than chemical surface modifications can do. Current modulation through back gate biasing was demonstrated at room temperature with a current on off ratio of 2 orders of magnitude, and the activation energy of the thermally activated transport regime was evaluated. The exponential dependence of the current on the length of the functionalized region in graphene suggested that conduction tuning is possible through strong localization of carriers at sites induced by a sparsely distributed random potential modulation.
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