Journal
ACS NANO
Volume 7, Issue 10, Pages 8891-8898Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn403378g
Keywords
Zno nanowires; uniaxial tensile strain; Raman spectrum; pure bending strain; size effect
Categories
Funding
- MOST [2013CB932602, 2013CB934600]
- NSFC [11274014, 11234001]
- Program for New Century Excellent Talents in University of China [NCET-12-0002]
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The effect of uniaxial tensile strain on individual ZnO nanowires with diameters ranging from 500 nm to 2.7 mu m and the effect of pure bending strain on ZnO microwires are systematically investigated by Raman spectroscopy. It is found for the first time that the tensile and compressive strains result in a linear downshift and upshift of the phonon frequencies of the E-2L, E-2H, E-1T0, and second-order modes compared with the strain-free state, respectively, while the A(1T0) mode is not influenced by the strain. Furthermore, the strain modulation on phonons depends strongly on the nanowire diameter. The E-2H phonon deformation potential is similar to 3 cm(-1)/% for the 500 nm nanowire, while 1% tensile strain results only in similar to 1 cm(-1) downward frequency shift for the 2.7 mu m ZnO wire. The results provide a versatile local-self-calibration and nondestructive method to measure and monitor the local strains in ZnO micro/nanostructures.
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