Journal
ACS NANO
Volume 7, Issue 1, Pages 75-86Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn302064p
Keywords
graphene; CVD; grain boundaries; scanning tunneling microscopy; spectroscopy; scattering
Categories
Funding
- Office of Naval Research t [N00014-06-10120, N00014-09-0180]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [1038015] Funding Source: National Science Foundation
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We use scanning tunneling microscopy and spectroscopy to examine the electronic nature of grain boundaries (GBs) in polycrystalline graphene grown by chemical vapor deposition (CVD) on Cu foil and transferred to SiO2 substrates. We find no preferential orientation angle between grains, and the GBs are continuous across graphene wrinkles and SiO2 topography. Scanning tunneling spectroscopy shows enhanced empty states tunneling conductance for most of the GBs and a shift toward more n-type behavior compared to the bulk of the graphene. We also observe standing wave patterns adjacent to GBs propagating in a zigzag direction with a decay length of similar to 1 nm. Fourier analysis of these patterns indicates that backscattering and intervalley scattering are the dominant mechanisms responsible for the mobility reduction in the presence of GBs in CVD-grown graphene.
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