Journal
ACS NANO
Volume 7, Issue 6, Pages 5199-5206Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn4009356
Keywords
hexagonal boron nitride; monolayer; bilayer; chemical vapor deposition; bubbling transfer
Categories
Funding
- National Science Foundation of China [51172240, 51290273, 50921004, 50972147]
- Ministry of Science and Technology of China [2012AA030303]
- Chinese Academy of Sciences [KGZD-EW-303-1]
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Atomically thin hexagonal boron nitride (h-BN), as a graphene analogue, has attracted increasing interest because of many fascinating properties and a wide range of potential applications. However, it still remains a great challenge to synthesize high-quality h-BN with predetermined number of layers at a low cost. Here we reported the controlled growth of h-BN on polycrystalline Pt foils by low-cost ambient pressure chemical vapor deposition with ammonia borane as the precursor. Monolayer, bilayer and few-layer h-BN domains and large-area films were selectively obtained on Pt by simply changing the concentration of ammonia borane. Moreover, using a bubbling method, we have achieved the nondestructive transfer of h-BN from Pt to arbitrary substrates and the repeated use of the Pt for h-BN growth, which not only reduces environmental pollution but also decreases the production cost of h-BN. The monolayer and bilayer h-BN obtained are very uniform with high quality and smooth surfaces. In addition, we found that the optical band gap of h-BN increases with decreasing number of layers. The repeated growth of large-area, high-quality monolayer and bilayer h-BN films, together with the successful growth of graphene, opens up the possibility for creating various functional heterostructures for large-scale fabrication and Integration of novel electronics.
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