Journal
ACS NANO
Volume 7, Issue 7, Pages 5870-5881Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn401093u
Keywords
nanomanufacturing; molybdenum disulfide; graphene; nanoelectronics; transistor; nanoprint
Categories
Funding
- NSF [CMMI-1232883, DMR-0320740, 0315633, ECCS-0922972]
- Department of Mechanical Engineering, University of Michigan
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences [12ZD05]
- staff of the Univeristy of Michigan's North Campus Electron Microbeam Analysis Laboratory
- staff of the University of Michigan's Lurie Nanofabrication
- Korea Institute of Energy Technology Evaluation and Planning
- Direct For Mathematical & Physical Scien [0315633] Funding Source: National Science Foundation
- Division Of Materials Research [0315633] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1232883] Funding Source: National Science Foundation
Ask authors/readers for more resources
Large-area few-layer-MoS2 device arrays are desirable for scale-up applications in nanoelectronics. Here we present a novel approach for producing orderly arranged, pristine few-layer MoS2 flakes, which holds significant potential to be developed into a nanomanufacturing technology that can be scaled up. We pattern bulk MoS2 stamps using lithographic techniques and subsequently transfer-print prepatterned MoS2 features onto pristine and plasma-charged SiO2 substrates. Our work successfully demonstrates the transfer printing of MoS2 flakes into ordered arrays over cm(2)-scale areas. Especially, the MoS2 patterns printed on plasma-charged substrates feature a regular edge profile and a narrow distribution of MoS2 flake thicknesses (i.e., 3.0 +/- 1.9 nm) over cm(2)-scale areas. Furthermore, we experimentally show that our plasma-assisted printing process can be generally used for producing other emerging atomically layered nanostructures (e.g., graphene nanoribbons). We also demonstrate working n-type transistors made from printed MoS2 flakes that exhibit excellent properties (e.g., ON/OFF current ratio 10(5)-10(7), field-effect mobility on SiO2 gate dielectrics 6 to 44 cm(2)/(V s)) as well as good uniformity of such transistor parameters over a large area. Finally, with additional plasma treatment processes, we also show the feasibility of creation of p-type transistors as well as pn junctions in MoS2 flakes. This work lays an important foundation for future scale-up nanoelectronic applications of few-layer-MoS2 micro- and nanostructures.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available