Journal
ACS NANO
Volume 7, Issue 8, Pages 6831-6839Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn401998r
Keywords
carbon nanotube; CVD; semiconducting; thin-film transistor; sensor
Categories
Funding
- Ministry of Science and Technology of China [2011CB932601]
- National Natural Science Foundation of China [51102242, 51221264, 51272256, 51272257]
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We developed a simple and scalable selective synthesis method of high,. quality, highly concentrated semiconducting single-wall carbon nanotubes (s-SWCNTs) by in situ hydrogen etching. Samples containing similar to 93% s-SWCNTs were obtained in bulk. These s-SWCNTs with good structural integrity showed a high oxidation resistance temperature of similar to 800 degrees C. Thin-film transistors based on the s-SWCNTs demonstrated a high carrier mobility of 21.1 cm(2) V-1 s(-1) at an on/off ratio of 1.1 x 10(4) and a high on/off ratio of 4.0 x 10(5) with a carrier mobility of 7.0 cm(2) V-1 s(-1). A biosensor fabricated using the s-SWCNTs had a very low dopamine detection limit of 10(-18) mol/L at room temperature.
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