Journal
ACS NANO
Volume 7, Issue 10, Pages 9106-9114Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn403715p
Keywords
spin field-effect transistor; epitaxial transfer; spin-orbit interaction; high-electron mobility transistor; selective wet-etching
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Funding
- KIST Institutional Program [2E23790, 2E24002, 2V02720]
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012-0005631]
- National Research Foundation of Korea [2011-0014965]
- National Research Foundation of Korea [2011-0014965] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm(2)/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (alpha) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the a value Increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations Indicate that the main causes of the large improvement in a are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented In this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.
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