Journal
ACS NANO
Volume 6, Issue 8, Pages 7009-7015Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn3021822
Keywords
topological Insulators; Bi2Se3; quantum well states; intercalation; alkali atoms
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Funding
- Lundbeck Foundation
- Institute for Storage Ring Facilities, Aarhus University
- Spanish Government [MAT2010-21156-C03-01]
- Basque Government [IT-257-07]
- Free and Hanseatic City of Hamburg via the Cluster of Excellence NANO-SPINTRONICS
- Deutsche Forschungsgemeinschaft via the Graduiertenkolleg Functional Metal-Semiconductor Hybrid Systems
- European Research Council (ERC) Advanced Grant FURORE
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Rubidium adsorption on the surface of the topological insulator Bi2Se3 is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two-dimensional electron gas state (2DEG) in the conduction band. The 2DEG shows a strong Rashba-type spin orbit splitting, and it has previously been pointed out that this has relevance to nanoscale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive, and exposure to oxygen leads to a rapid degrading of the 2DEG. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi2Se3, drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface.
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