Journal
ACS NANO
Volume 6, Issue 8, Pages 7311-7317Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn302422x
Keywords
MoS2; 2D crystals; electron microscopy; heterostrucure; interface
Categories
Funding
- Singapore National Research Foundation
- Royal Society
- Centre for Advanced Structural Ceramics (CASC) at Imperial College London
- NSF ECCS Award [1128335]
- Japan Society for the Promotion of Science (JSPS) [24656028]
- JST, PRESTO
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0923246] Funding Source: National Science Foundation
- Grants-in-Aid for Scientific Research [24656028] Funding Source: KAKEN
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Nanoscale heterostructures with quantum dots, nanowires, and nanosheets have opened up new routes toward advanced functionalities and implementation of novel electronic and photonic devices in reduced dimensions. Coherent and passivated heterointerfaces between electronically dissimilar materials can be typically achieved through composition or doping modulation as in GaAs/AlGaAs and Si/NiSi or heteroepitaxy of lattice matched but chemically distinct compounds. Here we report that single layers of chemically exfoliated MoS2 consist of electronically dissimilar polymorphs that are lattice matched such that they form chemically homogeneous atomic and electronic heterostructures. High resolution scanning transmission electron microscope (STEM) imaging reveals the coexistence of metallic and semiconducting phases within the chemically homogeneous two-dimensional (2D) MoS2 nanosheets. These results suggest potential for exploiting molecular scale electronic device designs in atomically thin 2D layers.
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