Journal
ACS NANO
Volume 6, Issue 7, Pages 6293-6300Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn301728j
Keywords
graphene; boron; substitutions; Raman
Categories
Funding
- Research Center for Exotic NanoCarbon Project, Japan Regional Innovation Strategy Program by the Excellence, JST
- MEXT [24310088, 20241023]
- Humboldt Foundation
- [NSF-DMR-10-04147]
- Grants-in-Aid for Scientific Research [20241023, 12J10710] Funding Source: KAKEN
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1004147] Funding Source: National Science Foundation
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The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was similar to 0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.
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