Journal
ACS NANO
Volume 6, Issue 7, Pages 5988-5994Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn300889c
Keywords
gallium selenide; nanosheets; photodetectors
Categories
Funding
- NSFC [61172001, 10874177]
- special funds for the Major State Basic Research of China [2009CB929301]
- Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry
- Fundamental Research Funds for Central Universities
- Chinese Program for New Century Excellent Talents in University
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
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Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW(-1) and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.
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