Journal
ACS NANO
Volume 6, Issue 8, Pages 7480-7488Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn302768h
Keywords
density gradient ultracentrifugation; self-assembled nanodielectrics; nanoelectronics; mobility; transconductance; subthreshold swing
Categories
Funding
- National Science Foundation [DMR-1006391, DMR-1121262]
- Nanoelectronics Research Initiative at the Materials Research Center of Northwestern University
- European Community [234808]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1121262, 1006391] Funding Source: National Science Foundation
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In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in se-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 mu S/mu m), intrinsic field-effect mobility (147 cm(2)/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 x 10(5)), while also achieving hysteresis-free operation in ambient conditions.
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