Surface Doping and Band Gap Tunability in Hydrogenated Graphene

We report the first observation of the n-type nature of hydrogenated graphene on SiO2 and demonstrate the conversion of the majority carrier type from electrons to holes using surface doping. Density functional calculations indicate that the carrier type reversal is directly related to the magnitude of the hydrogenated graphene's work function relative to the substrate, which decreases when adsorbates such as water are present. Additionally, we show by temperature-dependent electronic transport measurements that hydrogenating graphene induces a band gap and that In the moderate temperature regime [220-375 K], the band gap has a maximum value at the charge neutrality point, Is tunable with an electric field effect, and is higher for higher hydrogen coverage. The ability to control the majority charge carrier in hydrogenated graphene, in addition to opening a band gap, suggests potential for chemically modified graphene p-n junctions.