Journal
ACS NANO
Volume 6, Issue 9, Pages 7731-7738Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn301689m
Keywords
Cu-Ni alloy; carbon isotopes; growth mechanism; AB-stacked bilayer graphene; Raman; TOF-SIMS; TEM
Categories
Funding
- National Science Foundation [1006350, DMR-0923096]
- Office of Naval Research
- SWAN NRI
- National 973 Program of China [2012CB619301, 2011CB925600]
- National Natural Science Foundation of China [90921002, 60827004]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1006350] Funding Source: National Science Foundation
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Strongly coupled bilayer graphene (i.e., AB stacked) grows particularly well on commercial 90-10 Cu-Ni alloy foil. However, the mechanism of growth of bilayer graphene on Cu-Ni alloy foils had not been discovered. Carbon isotope labeling (sequential dosing of (CH4)-C-12 and (13)(H-4) and Raman spectroscopic mapping were used to study the growth process. It was learned that the mechanism of graphene growth on Cu-Ni alloy is by precipitation at the surface from carbon dissolved in the bulk of the alloy foil that diffuses to the surface. The growth parameters were varied to investigate their effect on graphene coverage and isotopic composition. It was found that higher temperature, longer exposure time, higher rate of bulk diffusion for C-12 vs C-13, and slower cooling rate all produced higher graphene coverage on this type of Cu-Ni alloy foil. The isotopic composition of the graphene layer(s) could also be modified by adjusting the cooling rate. In addition, large-area, AB-stacked bilayer graphene transferrable onto Si/SiO2 substrates was controllably synthesized.
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