Journal
ACS NANO
Volume 6, Issue 11, Pages 9879-9886Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn303446h
Keywords
spherulite; Interspheruilte boundary; grain boundary; organic semiconductor; solution processing
Categories
Funding
- NSF MRSEC program through the Princeton Center for Complex Materials [DMR-0819860]
- SOLAR Initiative at the NSF [DMR-1035217]
- National Defense Science and Engineering Graduate fellowship
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1035217] Funding Source: National Science Foundation
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The nanoscale boundaries formed when neighboring spherulites Impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 M Omega mu m(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries In thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from Inherent differences In the nature of film formation in the respective systems.
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