Journal
ACS NANO
Volume 6, Issue 11, Pages 9790-9796Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn303328e
Keywords
graphene; graphene mechanism; Bernal; bilayer; few-layer; chemical vapor deposition; copper
Categories
Funding
- AFOSR [FA9550-09-1-0581]
- AFOSR MURI [FA9550-12-1-0035]
- Lockheed Martin Corporation through the LANCER IV Program
- ONR MURI Program [00006766, N00014-09-1-1066]
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Few-layer graphene, with Bernal stacking order, is of particular Interest to the graphene community because of its unique tunable electronic structure. A synthetic method to produce such large area graphene films with precise thickness from 2 to 4 layers would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform Bernal-stacked bi-, tri-, and tetralayer graphene films were successfully synthesized on a Cu surface in selective growth windows, with a finely tuned total pressure and CH4/H-2 gas ratio. On the basis of the analyses obtained, the growth mechanism is not an independent homoexpitaxial layer-by-layer growth, but most likely a simultaneous-seeding and self-limiting process
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