Journal
ACS NANO
Volume 6, Issue 3, Pages 2312-2318Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn2044577
Keywords
memristor; state variable; conduction channel; chemical composition; multilevel storage
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Funding
- SyNAPSE of the Defense Advanced Research Projects Agency [HR0011-09-3-0001]
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TaOx-based memristors have recently demonstrated both sub-nanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaOx memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.
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