Journal
ACS NANO
Volume 6, Issue 9, Pages 7781-7788Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn3017603
Keywords
graphene; transistor; intrinsic properties; buffed oxide etch (BOE); PMMA; H2O/O-2 redox system; Fermi level
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Funding
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2011-0006268]
- Samsung Mobile Display
- SWAN-NRI
- ONR
- NSF of the USA
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The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H2O/O-2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H2O/O-2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H2O/O-2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.
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