Journal
ACS NANO
Volume 6, Issue 11, Pages 9657-9661Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn303070p
Keywords
single-walled carbon nanotubes; carbothermic reaction; field effect transistors
Categories
Funding
- Ministry of Science and Technology of China [2011CB932601]
- National Natural Science Foundation of China [50921004]
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Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 degrees C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of similar to 10(3).
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