High-Throughput Fabrication of Photoconductors with High Detectivity, Photosensitivity, and Bandwidth

Nanocrystalline cadmium selenide (nc-CdSe) was electrodeposited within a sub-50 nm gold nanogap, prepared by feedback-controlled electromigration, to form a photoconductive metal-semiconductor-metal nanojunction. Both gap formation and electrodeposition were rapid and automated. The electrodeposited nc-CdSe was stoichiometric, single cubic phase with a mean grain diameter of similar to 7 nm. Optical absorption, photoluminescence, and the spectral photoconductivity response of the nc-CdSe were all dominated by band-edge transitions. The photoconductivity of these nc-CdSe-filled gold nanogaps was characterized by a detectivity of 6.9 x 10(10) Jones and a photosensitivity of 500. These devices also demonstrated a maximum photoconductive gain of similar to 45 and response and recovery times below 2 mu s, corresponding to a 3 dB bandwidth of at least 175 kHz.