Journal
ACS NANO
Volume 6, Issue 1, Pages 74-80Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn2024557
Keywords
single-layer; MoS2; phototransistors; photocurrent; photoswitching; photoresponsivity
Categories
Funding
- AcRF (ARC) from MOE [MOE2010-T2-1-060]
- Singapore National Research Foundation under CREATE
- NTU in Singapore [M58120031]
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A new phototransistor based on the mechanically exfoliated single-layer MoS2 nanosheet is fabricated, and Its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of Incident-light control, prompt photoswitching, and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
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