Journal
ACS NANO
Volume 5, Issue 10, Pages 7812-7817Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn201809k
Keywords
graphene; nonvolatile flash memory; memory window; retention time; cell-to-cell interference
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Funding
- FCRP FENA
- NSF [DGE-11443]
- Aerospace Corporation's Independent Research and Development program
- Samsung Electronics Co. Ltd.
- Australian Research Council
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Graphene's single atomic layer of sp(2) carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the podtential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of graphene, such as high density of states, high work function, and low dimensionality. To this end, we have grown large-area graphene sheets by chemical vapor deposition and integrated them into a floating gate structure. GFM displays a wide memory window of similar to 6 Vat significantly low program/erase voltages of +/- 7 V. GFM also shows a long retention time of more than 10 years at room temperature. Additionally, simulations suggest that GFM suffers very little from cell-to-cell interference, potentially enabling scaling down far beyond current state-of-the-art flash memory devices.
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