Journal
ACS NANO
Volume 5, Issue 7, Pages 5995-6000Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn201770s
Keywords
organic resistive memory; flexible memory; graphene electrode
Categories
Funding
- National Research Laboratory program, National Core Research Center
- Korean Ministry of Education, Science and Technology
- GIST
- MKE/KEIT
- Ministry of Education, Science & Technology (MoST), Republic of Korea [gist-03-05] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Science, ICT & Future Planning, Republic of Korea [GIST-03-05] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2007-0055761, R31-2011-000-10026-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We fabricated 8 x 8 cross-bar array-type flexible organic resistive memory devices with transparent multilayer graphene (MLG) electrodes on a poly(ethylene terephthalate) substrate. The active layer of the memory devices is a composite of polyimide and 6-phenyl-C61 butyric add methyl ester. The sheet resistance of the MLG film on memory device was found to be similar to 270 Omega/square, and the transmittance of separated MLG film from memory device was similar to 92%. The memory devices showed typical write-once-read-many (WORM) characteristics and an ON/OFF ratio of over similar to 10(6). The memory devices also exhibited outstanding cell-to-cell uniformity with flexibility. There was no substantial variation observed in the current levels of the WORM memory devices upon bending and bending cycling up to 10 000 times. A retention time of over 10(4) s was observed without fluctuation under bending.
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