Journal
ACS NANO
Volume 5, Issue 4, Pages 2629-2636Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn102594d
Keywords
silicon nanowire; CMOS compatibility; ion implantation; field-effect transistor; CMOS inverter; plastic
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Funding
- MKE/KEIT [10030559]
- Nano RD Program [M10703000980-08M0300-98010]
- World Class University (WCU) [R32-2008-000-10082-0]
- Ministry of Education, Science and Technology (Korea Science and Engineering Foundation)
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030559] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [과C6A1602, R32-2011-000-10082-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A route to the top-down fabrication of highly ordered and aligned silicon nanowire (SiNW) arrays with degenerately doped source/drain regions from a bulk Si wafer Is presented. In this approach, freestanding n- and p-SiNWs with an Inverted triangular cross section are obtained using conventional photolithography, crystal orientation dependent wet etching, size reduction oxidation, and ion implantation doping. Based on these n- and p-SiNWs transferred onto a plastic substrate, simple SiNW-based complementary metal-oxide-semiconductor (CMOS) inverters are constructed for the possible applications of these SiNW arrays in integrated circuits on plastic. The static voltage transfer characteristic of the SiNW-based CMOS inverter, exhibits a voltage gain of similar to 9 V/V and a transition of 0.32 Vat an operating voltage of 1.5 V with a full output voltage swing between 0 V and V-DD, and its mechanical bendability Indicates good fatigue properties for potential applications of flexible electronics. This novel top-down approach is fully compatible with the current state-of-the-art Si-based CMOS technologies and, therefore, offers greater flexibility in device design for both high-performance and low-power functionality.
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