4.8 Article

Toward Practical Gas Sensing with Highly Reduced Graphene Oxide: A New Signal Processing Method To Circumvent Run-to-Run and Device-to-Device Variations

Journal

ACS NANO
Volume 5, Issue 2, Pages 1154-1164

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nn102803q

Keywords

graphene; reduced graphene oxide; gas sensor; sensing performance; field-effect transistor

Funding

  1. NSF [CMMI-0900509, CMMI-0856753]
  2. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-ACO2-06CH11357]
  3. Div Of Civil, Mechanical, & Manufact Inn
  4. Directorate For Engineering [0900569, 0856753] Funding Source: National Science Foundation

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Graphene is worth evaluating for chemical sensing and biosensing due to its outstanding physical and chemical properties. We first report on the fabrication and characterization of gas sensors using a back-gated field-effect transistor platform with chemically reduced graphene oxide (R-GO) as the conducting channel. These sensors exhibited a 360% increase in response when exposed to 100 ppm NO2 in air, compared with thermally reduced graphene oxide sensors we reported earlier. We then present a new method of signal processing/data interpretation that addresses (i) sensing devices with long recovery periods (such as required for sensing gases with these R-GO sensors) as well as (ii) device-to-device variations. A theoretical analysis is used to Illuminate the importance of using the new signal processing method when the sensing device suffers from slow recovery and non-negligible contact resistance. We suggest that the work reported here (including the sensor signal processing method and the Inherent simplicity of device fabrication) Is a significant step toward the real-world application of graphene-based chemical sensors.

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