Journal
ACS NANO
Volume 5, Issue 8, Pages 6148-6155Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn2014722
Keywords
In2O3; nanowires; ultrathin; transparent; transistors
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Funding
- National Natural Science Foundation of China [51002059, 21001046]
- 973 Projects of China [2011CBA00703]
- Natural Science Foundation of Hubei Province [2009CDB326]
- Research Fund for the Doctoral Program of Higher Education [20090142120059, 20100142120053]
- WNLO
- Analytical and Testing Center of Huazhong University of Science and Technology (HUST)
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Ultrafine one-dimensional (1-D) semiconducting nanostructures with diameters below 10 nm are attracting great research attention. Using a laser-ablation chemical vapor deposition (CVD) method, we reported the synthesis of single-crystal In2O3 nanowires with diameter below 4 nm. The as-synthesized ultrathin In2O3 nanowires act as the ultrathin branches of hierarchical In2O3 nanostructures and:show fast photoinduced switching surface wettability behaviors, and the contact angle decreased from 134.3 to 0 degrees in 10 min. Transparent thin-film transistors (TTFTs) were fabricated using the as-synthesized product, and the device conductance was 1-2 orders higher than the average conductance of the In2O3 single nanowire devices, revealing good opportunity In transparent electronics.
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