Journal
ACS NANO
Volume 6, Issue 1, Pages 873-880Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn204382k
Keywords
dye-sensitized solar cells; photovoltaics; nanostructured cells; TiO2/Sb2S3/P3HT
Categories
Funding
- Global Research Laboratory (GRL) through the National Research Foundation of Korea
- Ministry of Education. Science and Technology
- Korea Research Institute of Chemical Technology (KRICT), Republic of Korea
- Ministerio de. Educacion y Ciencia of Spain [HOPE CSD2007-00007]
- JES-NANOSOLAR [PLE2009-0042, MAT 2010-19827]
- Generalitat Valerciana [PROMETEO/2009/058]
Ask authors/readers for more resources
Nanoporous metal oxide electrodes provide a high internal area for dye anchoring in dye-sensitized solar cells, but the thickness required to extinguish the solar photons also enhances recombination at the TiO2/electrolyte interface. The high extinction coefficient of inorganic semiconductor absorber should allow the reduction of the film thickness, improving the photovoltage. Here we study all-solid semiconductor sensitized solar cells, In the promising TiO2/Sb2S3/P3HT configuration. Flat and nanostructured cells have been prepared and analyzed, developing a cell performance model, based on Impedance spectroscopy results, that allows us to determine the impact of the reduction of metal oxide film thickness on the operation of the solar cell. Decreasing the effective surface area toward the limit of flat samples produces a reduction In the recombination rate, Increasing the open circuit potential, V-oc while providing a significant photocurrent However, charge compensation problems as a consequence of Inefficient charge screening in flat cells increase the hole transport resistance, lowering severely the cell fill factor. The use of novel structures balancing recombination and hole transport will enhance solid sensitized cell performance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available