Journal
ACS NANO
Volume 5, Issue 8, Pages 6661-6668Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn202182p
Keywords
nano-FET; biosensor; nanowire number; nanowire diameter; nanowire doping density; nanomanipulation; nano-FET fabrication
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Funding
- Natural Sciences and Engineering Research Council of Canada
- Ontario Centres of Excellence, Hitachi High-Technologies Canada Inc.
- Canada Research Chairs program
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Semiconductive nanowire-based biosensors are capable of label-free detection of biological molecules. Nano-FET (field-effect transistor) biosensors exhibiting. high sensitivities toward proteins, nucleic acids, and viruses have been demonstrated. Rational device design methodologies, particularly those based on theoretical predictions, were reported. However, few experimental studies have Investigated the effect of nanowire. diameter, doping density, and number on nano-FET sensitivity. In this study, we devised a fabrication process based on parallel approaches and nanomanipulation-based post-processing for constructing nano-FET biosensor devices with carefully controlled nanowire parameters (diameter, doping density, and number). We experimentally reveal the effect of these nanowire parameters on nano-FET biosensor sensitivity. The experimental findings quantitatively demonstrate that device sensitivity decreases with increasing number of nanowires (4 and 7 nanowire devices exhibited a similar to 38 and similar to 82% decrease in sensitivity as compared to a single-nanowire device), larger nanowire diameters (sensors with 81-100 and 101-120 nm nanowire diameters exhibited a similar to 16 and similar to 37% decrease in sensitivity compared to devices with nanowire diameters of 60-80 nin), and higher nanowire doping densities (similar to 69% decrease:in sensitivity due to an increase In nanowire doping density from 10(17) to 10(19) atoms . cm(-3)). These results provide insight into the importance of controlling nanowire properties for maximizing sensitivity and minimizing performance variation across devices when designing and. manufacturing nano-FET blosensors.
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