Journal
ACS NANO
Volume 5, Issue 7, Pages 5490-5498Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn200771e
Keywords
graphene; oscillatory resistance; Coulomb interaction; short-range scattering; Bernal and rhombohedral stacking; excitonic gap; thermally activated
Categories
Funding
- NRF-CRP
- Agency for Science, Technology and Research (A*STAR) SERC [082 101 0015]
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We report on the first observation of an anomalous temperature-dependent resistance behavior in coupled Bernal and rhombohedral stacking graphene. At low-temperature regime (<50 K) the temperature-dependent resistance exhibits a drop while at high-temperature regions (>250 K), the resistance increases. In the transition region (50-250 K) an oscillatory resistance behavior was observed. This property is not present In any layered graphene structures other than five-layer. We propose that the temperature-dependent resistance behavior is governed by the interplay of the Coulomb and short-range scatterings. The origin of the oscillatory resistance behavior is the ABCAB and ABABA stacking configurations, which Induces tunable bandgap in the five-layer graphene. The obtained results also indicate that a perpendicular magnetic field opens an excitonic gap because of the Coulomb interaction-driven electronic instabilities, and the bandgap of the five-layer graphene is thermally activated. Potentially, the observed phenomenon provides important transport information to the design of few-layer graphene transistors that can be manipulated by a magnetic field.
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