Naphthalenetetracarboxylic Diimide Layer-Based Transistors with Nanometer Oxide and Side Chain Dielectrics Operating below One Volt

We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor. molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize Injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated, only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 mu A of drain current at 0.5 V of V-G and V-DS and W/L of 10-20, even though channel width (250 mu m) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V-1, 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied In the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.