Journal
ACS NANO
Volume 4, Issue 7, Pages 3987-3992Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn100877s
Keywords
polymer memory; bulk heterojunction; write-once-read-many-times; reduced graphene oxide; sheet resistance
Categories
Funding
- 973 project [2009CB930600]
- NNSFC [20704023, 60876010, 60706017, 20774043]
- Chinese Ministry of Education [208050, 707032, NCET-07-0446]
- NSF of Jiangsu Province [07KJB150082, BK2008053, 08KJB510013, SJ209003, TJ207035]
- Research Fund for Postgraduate Innovation Project of Jiangsu Province [CX088_083Z]
- STITP [2009120]
- MOE [RG 20/07]
- NRF [NRF-CRP2-2007-01]
- A*STAR [092 101 0064]
- Centre for Biomimetic Sensor Science at NTU in Singapore
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A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/AI has been designed for the polymer nonvolatile memory device. The current voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.
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